plaquette de silicium Ref : P308873

Description :

1. Wafer Diameter: (125 x 125)+/-0,4mm 2. Dimensions Tolerance: +/-0,4mm 3. Thickness of wafer, measured in the center of wafer: 190+/- 10μm, ≥185 μm 4. TTV: not more than 25 μm 5. Saw mark: ≤15 μm, invisible by eyes 6. Camber: ≤30 μm 7. Arc width departure(Big and small angle): ≤2mm in 45° 8. Surface Quality: No crack, no obvious saw mark, without obvious tactility, no pit, no V type gap, no hole, no glue left, surface cleaned, no abnormal spot, no stain. 9. Notch: not allowed 10. Tiny luminance Edge: Width ≤1/3 of wafer thickness; Length≤1/2 of wafer dimension 11. Edge defect: Edge defect width ≤0.2mm; extension less than 0.5mm; with total quantity ≤2, distance≥30mm1000000China1

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